TRANSCEND 2TB, M.2 2280, PCle Gen3x4, NVMe, 3D TLC, DRAM-less

SKU: TS2TMTE110S
UGX 627,000
In Stock
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SKU: TS2TMTE110S Categories: ,
  • Transcend’s PCIe SSD 110S utilizes the PCI Express® Gen3 x4 interface supported by the latest NVMe™ standard, to unleash next-generation performance.
  • The PCIe SSD 110S aims at high-end applications, such as digital audio/video production, gaming, and enterprise use,
  • which require constant processing heavy workloads with no system lags or slowdowns of any kind. Powered by 3D NAND flash memory,
  • the PCIe SSD 110S gives you not only fast transfer speeds but unmatched reliability.

Description

Compelling performance for highend applications
Transcend’s PCIe SSD 110S/112S follows NVMe 1.3
and utilizes the PCIe™ Gen3 x4 interface, meaning
four lanes are used for transmitting and receiving data
simultaneously, resulting in compelling performance of
up to 2,500MB/s read and 1,700MB/s write.
Note: Performance is based on CrystalDiskMark v5.0.2.
3D expansion to break through limits
Unlike the existing planar NAND chips, 3D NAND flash
is a type of flash memory in which the memory cells are
stacked vertically in multiple layers. 3D NAND is
developed to break through density limitations of the
2D planar NAND, and thus can deliver a greater level
of performance and endurance.
Better endurance, higher reliability
Transcend’s PCIe SSD 110S/112S is engineered with
LDPC (Low-Density Parity Check) coding, a powerful
ECC algorithm, to keep data secure. Manufactured with
high-quality NAND flash chips, and engineered
dynamic thermal throttling mechanism, the PCIe SSD
110S/112S guarantees superior endurance and stability
for high-end applications.

Appearance
Dimensions Single-sided: 80 mm x 22 mm x 2.23 mm (3.15" x 0.87" x 0.09")
Double-sided: 80 mm x 22 mm x 3.58 mm (3.15" x 0.87" x 0.14")
Weight 8 g (0.28 oz)
Type M.2 2280
Interface
Bus Interface NVMe PCIe Gen3 x4
Storage
Flash Type 3D NAND flash
Capacity 128 GB / 256 GB / 512 GB / 1 TB / 2 TB
Operating Environment
Operating Temperature 0°C (32°F) ~ 70°C (158°F)
Operating Voltage 3.3V±5%
Performance
Sequential Read/Write
(CrystalDiskMark)
Read: up to 2,500 MB/s
Write: up to 1,700 MB/s
4K Random Read/Write (IOmeter) Read: up to 200,000 IOPS
Write: up to 250,000 IOPS
Mean Time Between Failures
(MTBF)
2,000,000 hour(s)
Drive Writes Per Day (DWPD) 0.2 (5 yrs)
Terabytes Written (TBW) up to 800 TBW
Warranty
Certificate CE / FCC / BSMI / KC / RCM / UKCA
Warranty Five-year Limited Warranty